Abstract
This paper presents the design methodology of a Low-Noise Amplifier (LNA) with a dual-stage
structure. It is implemented using ultra-low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT)
(ATF-36077). The LNA is biased at a Vds of 3.3V with an Id of 0.029A for which 0.095W of power is
consumed. A common source mode design is employed and a matching circuit is implemented using microstrip
lines. The circuit adopts a single-ended dual-stage solution connected by a coupling capacitor. The amplifier
provides an average forward gain (S21) of 19.944dB. It has an input and output return loss of -11.167dB and -
13.099dB respectively. The Noise Figure variation at the operational frequency is 1.507dB. Ku-Band satellite
applications have experienced a sharp rise in the past few years in the communication domain and a low noise
amplifier is an essential element in satellite front-end applications. The designed LNA is suggested for
applications in satellite downlink communications as it has an operational frequency of 11.5 GHz.
Details
| Primary Language | English |
|---|---|
| Subjects | Engineering |
| Journal Section | Articles |
| Authors | |
| Publication Date | December 31, 2022 |
| Published in Issue | Year 2022 |
