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Year 2022, Volume: 21 , 464 - 468, 31.12.2022
https://doi.org/10.55549/epstem.1226678

Abstract

Effect of Neon Ion Implantation on the Electrical Propertie of CIGS Photovoltaic Cells

Year 2022, Volume: 21 , 464 - 468, 31.12.2022
https://doi.org/10.55549/epstem.1226678

Abstract

The global energy demand is huge. Conventional fossil fuels such as oil, natural gas and coal are
running out fast. These fossil fuels produce a huge amount of carbon dioxide, which is one of the greenhouse
gases identified as the main cause of the global warming of the planet. More and more alternative sources of
energy are being used: renewable and environmentally friendly. Solar energy is one of them. The photovoltaic
sector converts solar radiation into electricity. This is done using photovoltaic cells. The highest conversion
yields are obtained from mono-crystalline silicon cells. mono-crystalline silicon becomes relatively expensive,
the ternary and quaternary chalcopyrite semiconductors are a viable economic alternative. Thin films
chalcopyrite (CuInGaSe2) semiconductors have gained their place in solar energy harvesting. CIGS solar cells
are increasingly efficient every year. It has been shown that the ion implantation affects the structure by
changing or introducing defects. This in turn affects the electric properties of the material and may increase the
efficiency of the solar cells. Thin films of Cu(InGa)Se2 deposited by low cost process were studied by
simulating the ion implantation using SRIM software. Different energies and different doses of implantation
were simulated in order to analyze the electrical properties of photovoltaic cells.

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Details

Primary Language English
Subjects Engineering
Journal Section Articles
Authors

Mustapha Djabar

Publication Date December 31, 2022
Published in Issue Year 2022Volume: 21

Cite

APA Djabar, M. (2022). Effect of Neon Ion Implantation on the Electrical Propertie of CIGS Photovoltaic Cells. The Eurasia Proceedings of Science Technology Engineering and Mathematics, 21, 464-468. https://doi.org/10.55549/epstem.1226678