It was shown recently that the double perovskite Rb2PtI6 exhibits excellent electronic and optical properties that are relevant for photovoltaic applications in particular. Herein, we report deep simulation results of a novel high-performance lead-free halide double perovskite solar cell (PSC) with the architecture FTO/ZnSe/Rb2PtI6/MoSe2/C. The thicknesses of all layers such as: FTO, hole transport layer (HTL), Rb2PtI6 absorber and electron transport layer (ETL) for the device were optimized. The role of electronic band diagram engineering is demonstrated to be essential for the photovoltaic performance of the solar cell. Moreover, the effects of capacitance (C-V), MottβSchottky (M-S) characteristics, generation and recombination rates, series resistance (π π ) and shunt resistance (π π β) on the current-voltage characteristics (J-V), and quantum efficiency (QE) are analyzed. Our obtained results shows that this best proposed Rb2PtI6-based device can serve as a potential eco-friendly high efficiency solar cell candidate due to the chemical stability and non-toxicity of its active layer. The best obtained efficiency ππΆπΈ reaches 20.54 %, with short circuit current density π½ππΆ of 34.41 ππ΄/ππ2 , open circuit voltage πππ of 0.79 π and fill factor πΉπΉ of 75.8 % compared to the initial ππΆπΈ of 12.94 %. To validate our results, we compared the simulation outcomes with other similar double PSC cells previously published. Good agreement is obtained with experimental and simulation studies.
Lead-free halide double perovskite solar cells based on Rb2PtI6 band gap diagram Generation and recombination rates Series resistance (π π ) Shunt resistance (π π β).
Primary Language | English |
---|---|
Subjects | Chemical Engineering (Other) |
Journal Section | Articles |
Authors | |
Early Pub Date | December 21, 2024 |
Publication Date | December 30, 2024 |
Submission Date | May 24, 2024 |
Acceptance Date | August 6, 2024 |
Published in Issue | Year 2024Volume: 32 |